Bengaluru-based researchers design photonic memory that could lead to highly efficient computing systems

Researchers at the Bengaluru-based Center for Nano and Soft Matter Sciences (CeNS) have fabricated a photonic memory based on tin oxide skewed nanorod arrays, which shows great potential for the development of high-density and high-efficient computing systems.

According to the Ministry of Science and Technology, the CENS team, comprising Swati SP, Athira M. and S. Angappan, developed photonic memory in which tin oxide oblique nanorod arrays are used as an active layer.

Tin oxide nanostructures are prepared by electron-beam evaporation through a technique called glancing angle deposition (GLAD) technique.

“Electron-beam evaporation is a physical vapor deposition method in which a focused electron beam is created to bombard the desired target material, resulting in its vaporization, and ultimately the deposition of the target material on the substrate. GLAD coordinates of the substrate Facilitates preparation of complex nanostructures by manipulating (tilt and rotation),” the ministry said.

It said the researchers observed good switching characteristics of the memory devices, including low operating voltage, moderate on/off ratio (refers to the ratio of current in the on state (low resistance state-LRS) to the off state (high resistance position). – HRS) memory device), longer endurance, and improved retention with a self-compliance effect in the dark.

“Currently, various research groups around the world are designing and realizing non-volatile, ultrafast, reliable, functional memory systems that outperform conventional silicon-based flash memory. In this big data era, data storage devices A new class of memories that can overcome the physical limitations of existing memory technologies is being vigorously pursued. One such class of memories is commonly known as memristor (an abbreviation for memory resistor). , which can store and process data through electrical signals.

Researchers at CENS, an autonomous institute of the Department of Science and Technology, have designed such a functional memory and the research was recently published in ACS Applied Materials.